Wolfspeed, now Infineon, offers a large range of GaN RF products. The devices are in broad demand throughout energy, electronics, industry, transportation and military telecommunications sectors. The CGHV40100 is an unmatched gallium-nitride (GaN) high-electron-mobility transistor operating from a 50-volt rail and up to 3-GHz.
The CGHV40100 device includes a single GaN on SiC HEMT die with an area of 4.17mm2. The device is manufactured on ultra-thin wafer with gold vias to make the source connection. The HEMT shows the typical GaN Epitaxy structure for lateral device and a source connected field plate.
The device is assembled in a SOT467C package, with ceramic substrate materials which have an excellent combination of electrical, mechanical and thermal properties. The flange material is CuMoCu heatsink.
The report also includes complete chip and module fabrication processes overviews and cost estimation.