This report presents an in-depth analysis of silicon capacitors that adopt different structures including metal-insulator-semiconductor (MIS), metal-nitride-oxide-silicon (MNOS), and Deep Trench. It shows the differences between eight selected devices from TSMC, Murata/IPDiA, Vishay and Skyworks: all the major producers on the market and their new technologies.
For each device, the report details the manufacturing process and materials used, component design, and die size. It then compares the components' sizes, materials and characteristics including technical and electrical parameters in detail.
Silicon capacitors are passive devices used in specific applications, such as radio frequency, medical, aerospace, automotive, circuit decoupling and electrostatic discharge protection.
This report provides a unique opportunity to understand the technology choices, technology roadmap, evolution and manufacturing cost of the major silicon capacitor manufacturers, to give the bases for an optimal choice of components during design and integration.
The miniaturization of electronic devices and systems always requires better integration of all the components, including the passive ones. It is with this aim that we have compared the major characteristics of each capacitor.
The report includes comparison of cost, selling prices and front-end processes.
Key Topics Covered:
2. Executive Summary Reverse Costing Methodology
3. Company Profile IPDiA Profile and Products Vishay Profile and Products Skyworks Profile and Products TSMC Profile and Products
4. Physical Analysis IPDiA 935-121-427-710 935-121-424-410 935-121-425-610 935-125-42S-710 Vishay RFCS04021500CBTT1 RFCS04024000DBTT1 Skyworks SC00380912 TSMC GS25 in iPhone 7 plus Physical comparison Design Comparison Height Comparison Material Comparison Capacitance Analysis Manufacturing Process Flow
5. Summary Wafer Fabrication Unit Capacitor Process Flow