- GaN on diamond semiconductor substrates emerge as successor to GaN-on-SiC for high-performance power electronics and MOSFETs; high electron mobility transistor (HEMT) applications present lucrative avenues
- R&D in GaN on diamond semiconductor substrates market to pave the way for components to be used in next-gen 5G base stations and IoT emerge as promising application
ALBANY, N.Y., Nov. 3, 2021 /PRNewswire/ --
GaN on Diamond Semiconductor Substrates Market: Broad Contours
GaN on diamond substrates are growing in commercial scope for developing range of power electronics, owing to their effect in considerably increasing the thermal resistivity and efficiency. Their use is gathering traction in wideband GaN power transistors that find applications in military-grade power dense equipment. The interest stems from their higher thermal conductivity than the current generation of GaN-on-SiC devices. Growing demand for GaN on diamond wafers for use in high electron mobility transistors (HEMTs) has offered steady revenue gains to players in the GaN on diamond semiconductor substrates market.
Over the years, industry players have benefitted from researchers demonstrating strikingly superior electrical characteristics in a number of HEMT applications. Thus, providers of high-power solutions in the semiconductor industry have been keenly integrating GaN with diamond to extend the horizon in next-gen power electronics. The possibilities are vast and as scrutinized by analysts at TMR, the global GaN on diamond semiconductor substrates market is projected to reach US$ 142.05 Mn by 2031.
Key Findings on GaN on Diamond Semiconductor Substrates Market Study
Growing Application of GaN on Diamond HEMTs Opens Massive Opportunities for Semiconductor Companies: High-electron–mobility transistor (HEMT) devices based on GaN are increasingly adopting diamond over SiC substrate for gaining remarkable thermal efficiencies in the electrical systems. This has spurred research on novel techniques for integrating GaN with diamond substrates, typically augmenting the GaN performance for higher power operations. Researchers are constantly striving for overcoming limitations of chemical vapor deposition (CVD) systems. As a result, high-electron–mobility transistor (HEMT) devices based on GaN are gaining popularity in the power electronics industry.
The production of GaN-on-diamond wafers for meeting the needs of 5G base station is witnessing a marked impetus from massive developments of 5G infrastructure in various countries in recent years. Furthermore, the growing use of GaN-based HEMTs in high-voltage and high-switching–frequency motor control applications is spurring research on the final system performance and its reliability.
Need for State-of-the-art RF Power Amplifiers in Power Electronics and Aerospace Applications Boosts Market: The demand for high power RF electronics in military radar applications and satellite communication is a key trend in the commercialization of products in the GaN on diamond semiconductor substrates market. The demand for HEMTs in commercial base stations and military radar applications has risen, thereby bolstering the prospects, notes a TMR study on the GaN on diamond semiconductor substrates market. Another area with vast potential prospect is next-gen RF power amplifiers in radar applications, such as for navigation and real-time air traffic control in aerospace science.
GaN on Diamond Semiconductor Substrates Market: Drivers
Players in the power electronics industry are in constant pursuit of adopting novel wafers for fabricating state-of-the-art semiconductor devices. This opened a vast scope for wide bandgap semiconductor devices. Various simulation studies have demonstrated the superior electrical properties of diamond over silicon as a substrate in MOSFETs and insulated-gate bipolar transistors (IGBTs). The popularity of GaN-on-diamond-based transistors has stemmed from the diamond's exceptional thermal conductivity, leading to efficient cooling, making them suitable for high-frequency power applications.
The growing interest in boosting the output power of GaN-based HEMTs for meeting the needs of next-gen wireless communications are extending the horizon for chip manufacturers in the GaN on diamond semiconductor substrates market. The prospect has drawn sizable investments by developers of high-power electronics to cater to requirements in defense and industrial IoT systems.
GaN on Diamond Semiconductor Substrates Market: Regional Growth Dynamics
Opportunities in the North AmericaGaN on diamond semiconductor substrates market are anticipated to expand at a promising pace during the forecast period of 2021-2031. Technological strides made in power electronics and wireless infrastructure have helped spur the demand for products in multiple industries in the emerging economies of the region. The U.S. currently holds a prominent share of the North America market. Canada and Mexico are also expected to contribute significantly to the revenue generation of the regional market in the near future.
GaN on Diamond Semiconductor Substrates Market: Key Players
Some of the prominent players profiled in the study are Advanced Diamond Technologies, Crystallume Corporation, Qorvo Inc., Microwave Enterprises Ltd., Diamond Microwave Devices Limited, Carat Systems, and Blue Wave Semiconductor.
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