DUBLIN, June 23, 2015 /PRNewswire/ --

Research and Markets(http://www.researchandmarkets.com/research/98v4lc/gan_industrial) has announced the addition of the "GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021" report to their offering.

The report provides a strategic analysis of the global GaN industrial devices market. The global GaN industrial devices market has been segmented on the basis of types, applications and geography.

The competitive profiling of the key players in the market and their market share across the five geographic segments namely, North America, Europe, Asia Pacific, Middle East and Africa and Latin America have been covered under the scope of the report. Moreover, the different business strategies that have been adopted by the leading players have been covered in this report. The market attractiveness analysis and supply chain analysis have been included in the report in order to provide an insight into the market dynamics.

An exhaustive analysis of the market dynamics namely, the market drivers, restraints and opportunities has been also included under the purview of the report. Market dynamics are the factors that impact the growth of the market and thus help to understand the current trends in the market. Thus, the report provides a detailed analysis of the global GaN industrial devices market and also offers the forecast from 2015 to 2021.

The global GaN industrial devices market has been segmented into:

GaN HEMT market, by Application
- WiMAX/LTE market
- Wireless phone infrastructure: Base stations (BTS) market
- CATV market
- V-SAT market
- Satellite market
- Defense market
- Others

GaN industrial devices market, by Types:
- Power devices
- Schottky diode
- Metal oxide semiconductor field effect transistor (MOSFETs)
- High electron mobility transistors (HEMTs)
- Others (rectifiers, other advanced transistor types)
- Opto electronics
- Light-emitting diodes
- Laser diodes
- GaN industrial devices market, by Application
- Radio frequency (RF)
- Light-emitting diodes (LED)
- Power device

Key Topics Covered:

Chapter 1 Preface

Chapter 2 Executive Summary

CHAPTER 3 Global GaN Industrial Devices Market Overview

Chapter 4 Global GaN RF Market Analysis: High Electron Mobility Transistor (HEMT)

Chapter 5 Global GaN HEMT Market Revenue: By Application, 2014 - 2021 (USD Mn)

Chapter 6 Maturity of GaN Technology

Chapter 7 Gallium Nitride (GaN) Industrial Devices Market Revenue, By Types, 2014 - 2021 (USD Mn)

Chapter 8 Global GaN Industrial Devices Market Revenue and Shipment Volume, by Applications, 2014 - 2021 (USD Mn and Million Units)

Chapter 9 Global GaN Industrial Devices Market Revenue, By Geography, 2014 - 2021 (USD Million)

Chapter 10 Company Profiles
- Cree Inc.
- Efficient Power Conversion Corporation
- Freescale Semiconductor Inc.
- Fujitsu Limited
- GaN Systems Inc.
- International Quantum Epitaxy plc
- International Rectifier
- NXP Semiconductors N.V.
- Nichia Corporation
- RF Micro Devices Inc.
- Renesas Electronics Corporation
- Texas Instruments Inc.
- Toshiba Corporation

For more information visit http://www.researchandmarkets.com/research/98v4lc/gan_industrial

Media Contact: Laura Wood , +353-1-481-1716, press@researchandmarkets.net

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SOURCE Research and Markets