Reverse Costing Analysis of The CAS120M12BM2 from CREE Semiconductor

DUBLIN, Oct. 09 2015 /PRNewswire/ --

Research and Markets (http://www.researchandmarkets.com/research/st8kkw/cree_1200v_sic) has announced the addition of the "CREE 1200V SiC Module - Reverse Costing Analysis" report to their offering.

The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13m?), a fast switching speed and a fast reverse recovery.

The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode.

The second generation MOSFET has a new gate design, a more sophisticated ohmic contact and a thinner substrate, the comparison between the 2 generation is doing in the report.

Based on a complete teardown analysis, the report provides an estimation of the production cost of the CAS120M12BM2 package, SiC MOSFET Transistor and Schottky Barrier Diode.

Key Topics Covered:

1. Overview / Introduction

2. Companies Profile

3. CREE Profile

4. CAS120M12BM2 Characteristics

5. CAS120M12BM2 Characteristics

6. CAS120M12BM2 Physical Analysis

7.Physical Analysis Methodology
- Package Views & Dimensions

8. MOSFET

9. Die View, Dimensions & Marking
- Guard Ring
- Cross-Section Gate
- Substrate and Epitaxy Layers, Backside
- MOSFET Characteristics
- Comparison First and Second Generation

10. Diode

11. Die View, Dimensions & Marking
- Guard Ring, Cross-Section
- Substrate and Epitaxy Layers
- Backside
- Diode Characteristics

12. Manufacturing Process Flow

13.Global Overview
- MOSFET Front end Unit, Tests Unit
- Transistor Process Flow
- Diode Front end Unit, Process Flow
- Diode Process Flow
- Power Module Process Flow

14. Cost Analysis

15. Synthesis of the cost analysis
- Main steps of economic analysis

16. MOSFET

17. Yields Hypothèses
- MOSFET Epitaxy Cost
- MOSFET Front-End Cost
- MOSFET Wafer Cost
- MOSFET Cost per process steps
- MOSFET : Back-End : Probe and

18. Diode

19. CAS120M12BM2

20. Package & Final Test

21. Price Estimation

22. Contact

For more information visit http://www.researchandmarkets.com/research/st8kkw/cree_1200v_sic

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