Research and Markets - Global Next Generation Memory Market to Grow at a CAGR of 66.63%, 2017-2021 with Cypress Semiconductor, Fujitsu, Intel, IBM, Micron Technology, Samsung, Texas Instruments & Toshiba Dominating

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Research and Markets

24 Apr, 2017, 13:00 GMT

DUBLIN, Apr. 24, 2017 /PRNewswire/ --

Research and Markets has announced the addition of the "Global Next Generation Memory Market 2017-2021" report to their offering.

The global next generation memory market to grow at a CAGR of 66.63% during the period 2017-2021.

The report, Global Next Generation Memory Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

One trend in market is growing emergence of new FeRAM design using CMOS processes. Researchers have designed flexible FeRAM devices using state-of-the-art CMOS processes that involve sputtering, photolithography, and reactive ion etching. Their research led to a reduction in the gap between a rigid, inflexible semiconductor, which has high integration density, performance, and yield, and highly flexible polymer/hybrid materials that are low-performance electronics. To reduce the thickness of traditional silicon wafers and make electronics flexible, researchers used the existing standard CMOS fabrication processes.

According to the report, one driver in market is low power consumption. Next-generation memory technologies are mostly used in battery-powered wireless sensors, as they consume approximately 50% less power than other flash memories. This increases the battery life, leading to a reduction in maintenance costs. Thus, vendors in the market get the advantage to compete based on prices.

Moreover, due to lesser power consumption, users prefer buying devices integrated with the next-generation memory technologies as their expenses also get reduced. In addition, next-generation memory technologies have the unique feature of a faster wake-up time. They also eliminate the need for data saving and restoring, unlike other flash memories. This gives next-generation memory technologies an additional benefit over other RAMs, along with the advantage of lower power consumption. Next-generation memory technologies help in the automatic update of systems, especially in wireless applications. All these factors attract device manufacturers and end-users, which will drive the adoption of these technologies during the forecast period.

Key vendors

  • Cypress Semiconductor
  • Fujitsu
  • Intel
  • IBM
  • Micron Technology
  • ROHM Semiconductor
  • Samsung Electronics
  • Texas Instruments
  • Toshiba

Other prominent vendors

  • Adesto Technologies
  • Crossbar
  • Everspin Technologies

Key Topics Covered:

PART 01: Executive summary

PART 02: Scope of the report

PART 03: Research Methodology

PART 04: Introduction - Key market highlights

PART 05: Emerging memory technologies

PART 06: Supply chain

PART 07: Market landscape

PART 08: Market segmentation by product

PART 09: Market segmentation by application

PART 10: Geographical segmentation

PART 11: Decision framework

PART 12: Drivers and challenges

PART 13: Market trends

PART 14: Vendor landscape

PART 15: Key vendor analysis

PART 16: Appendix

For more information about this report visit http://www.researchandmarkets.com/research/r9f269/global_next

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