Infineon EconoPACK4 1200V IGBT4 Module - Reverse Costing Analysis

DUBLIN, Feb .19, 2015 /PRNewswire/ --Research and Markets

(http://www.researchandmarkets.com/research/rbrk35/infineon) has announced the addition of the "Infineon EconoPACK4 1200V IGBT4 Module - Reverse Costing Analysis" report to their offering.

The FS100R12PT4 from Infineon is a 6-pack IGBT4 high-voltage power module in EconoPACK4 package. With a breakdown voltage of 1200V for a current of 100A, the module is optimized for high power converters and motor drivers. The power module integrates the improved IGBT4 and the optimized EMCON4 diodes from Infineon.

The IGBT4 module offers a very low on-resistance (1.4 m?) and a higher operating temperature (up to 150 °C) in a 130.0 x 103.0 x 20.55 mm package. The IGBT4 differs from the IGBT3 with an adjusted backside, a different gate dimensions to obtain lower switching losses and increase softness for the same robustness.

This full reverse costing analysis has been conducted to provide insight on technology data, manufacturing cost and selling price of the Infineon FS100R12PT4, including a technological comparison of Infineon IGBT3 vs. IGBT4 and EconoPACK4 vs. HybridPACK2.

Key Topics Covered:

1. Overview / Introduction
- Executive Summary
- Reverse Costing Methodology

2. Company Profile

3. Physical Analysis
- Synthesis of the Physical Analysis
- Package analysis- View and dimensions and marking
- Housing- Base Plate Cross-Section
- DBC Cross-Section
- EconoPACK4 vs HybridPACK

IGBT Analysis
- Dimension
- Gate Supply Line and Guard Ring
- Trench Gate Cross-Section
- Revelation
- Infineon IGBT4 vs IGBT

Diode Analysis
- Dimension
- Guard Ring
- Revelation

4. Manufacturing Process Flow
- Overview
- IGBT and Diode Process Flow
- Description of the Wafer Fabrication Units
- IGBT Process Flow
- Diode Process Flow
- Package Process Flow

5. Cost Analysis
- Synthesis of the Cost Analysis
- Main Steps of Economic Analysis
- Yields Explanation

Cost Analysis IGBT
- Wafer Cost Hypothesis
- IGBT Wafer Cost
- Breakdown per process step
- IGBT Equipment Cost per Family
- IGBT Material Cost per Family
- IGBT Probe Cost- IGBT Die cost

Cost Analysis Diode
- Wafer Cost Hypothesis
- Diode Wafer Cost
- Breakdown per process step
- Diode Equipment Cost per Family
- Diode Material Cost per Family
- Diode Probe Cost
- Diode Die cost

Cost Analysis FS100R12PT4
- Assessing BOM
- DBC Cost
- FS100R12PT4 Module Cost
- Yield Synthesis

For more information visit http://www.researchandmarkets.com/research/rbrk35/infineon

Media Contact: Laura Wood , +353-1-481-1716, press@researchandmarkets.net

Related Links

http://www.researchandmarkets.com