Global Gallium Nitride GaN Semiconductor (Power, Opto) Devices Market - Forecast to 2019

DUBLIN, July 2, 2014 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/kfqvzz/gan_semiconductor) has announced the addition of the "GaN Semiconductor Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019" report to their offering.

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Gallium Nitride (GaN) is a hard material that contains various chemical properties due to which it finds its suitability for manufacturing of semiconductor devices. Currently GaN semiconductor device market is facing a stiff competition from SiC semiconductor devices. Popularity of GaN semiconductor devices is expected to increase with the growing application areas of GaN semiconductor devices.

Emergence of new technologies and rising application areas are the major drivers of this market. Electric and hybrid electric vehicles pose a huge opportunity area for GaN semiconductor. However, costlier industrial process is the major hindrance for this market.

The objective of this report is to find, analyze, and provide growth forecasts for GaN semiconductor devices for various applications such as computer, ICT (Information and Communication Technology), automotive, military, aerospace, defense, consumer electronics and medical among others. This research report provides thorough analysis of the global GaN semiconductor device market based on its product types, applications, and geographies for the period from 2013 to 2019. It provides complete outlook of major drivers, restraints, and opportunities responsible for the popularity and growth of GaN semiconductor devices.

In addition, the report covers company profiles of key players in the market, their recent developments and business strategies. Some of the major players profiled in the report are Fujitsu Limited (Japan), GaN Systems Inc (Canada), Freescale Semiconductors Incorporated (U.S.), International Rectifier Corporation (U.S.), and RF Micro Devices Inc. (U.S.) among others.

Moreover, the report helps in better understanding of the market with the help of various highlights on the competitive situation across different levels of the value chain and Porter's five forces analysis. In all, the report provides a detailed analysis of the global GaN semiconductor devices market along with the forecast in terms of revenue (USD million) for all the segments from 2013 to 2019.

Key Topics Covered:

Chapter 1 Preface

Chapter 2 Executive Summary

CHAPTER 3 Gallium Nitride (GaN) Semiconductor Devices Market Analysis

Chapter 4 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Product 2013 - 2019

Chapter 5 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Applications 2013 - 2019

Chapter 6 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Geography 2013 - 2019

Chapter 7 Company Profiles

Companies Mentioned:

• Cree Inc.
• Efficient Power Conversion Corporation
• Freescale Semiconductor Inc.
• Fujitsu Limited
• GaN Systems Inc.
• International Quantum Epitaxy plc
• International Rectifier
• NXP Semiconductors N.V.
• Nichia Corporation
• RF Micro Devices Inc.
• Renesas Electronics Corporation
• Texas Instruments Inc.
• Toshiba Corporation

For more information visit http://www.researchandmarkets.com/research/kfqvzz/gan_semiconductor

Media Contact: Laura Wood, +353-1-481-1716, press@researchandmarkets.net

SOURCE Research and Markets