DUBLIN, Jan. 8, 2018 /PRNewswire/ --
The "GaN Power Device Market by Device Type, Voltage Range, Application, Vertical, and Geography - Global Forecast to 2023" report has been added to Research and Markets' offering.
The GaN power device market is expected to reach USD 1,890.2 Million by 2023 from USD 408.3 Million in 2017, at a CAGR of 29.1% between 2017 and 2023.
The major factors driving the growth of the GaN power device market include huge revenue generation from the consumer electronics and automotive verticals, wide bandgap property of GaN material encouraging innovation, success of GaN in RF-power electronics, and increasing adoption of GaN RF power device in military, defense, and aerospace verticals.
The market for RF power devices held the largest market share in 2016. The need for high power in the very high frequency (VHF), ultrahigh frequency (UHF), and microwave bands has led to the demand for these devices, which can supply tens to hundreds of watts at RF frequencies up to 10 GHz and beyond. Most of these devices are made from GaN. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. Moreover, the large total addressable markets such as power distribution systems, industrial systems, heavy electrical systems, turbines, heavy machinery, advanced industrial control systems, and electromechanical computing/computer systems, as well as several new power applications (clean-tech) such as high-voltage direct current (HVDC), smart grid power systems, wind turbines, wind power systems, solar power systems, and electric and hybrid electric vehicles are among the prime reasons for its faster growth.
Asia Pacific (APAC) is expected to hold the largest share of the GaN power device market during the forecast period owing to the growing demand for power devices in the industrial, computing, telecommunications, automotive and military, and aerospace and defense verticals in emerging Asian countries such as China, Japan, Taiwan, the Philippines, and India. Moreover, the EV charging and electric vehicle production markets, as well as increasing renewable energy generation are driving the growth of the GaN power device market in APAC.
APAC held the largest share of the overall GaN power device market in 2016 owing to the growing demand for these devices in numerous applications such as industrial, computing, telecommunications, consumer and enterprise, automotive and military, and aerospace and defense in Asian countries such as China, Japan, Taiwan, the Philippines, and India.
However, competition from silicon carbide (SiC) in high-voltage semiconductor applications is expected to be one of the key factors restraining the market growth.
- Huge Revenue Generation From the Consumer Electronics and Automotive Verticals
- Wide Bandgap Property of GaN Material Encouraging Innovation
- Success of GaN in RF-Power Electronics
- Increasing Adoption of GaN RF Power Device in Military, Defense, and Aerospace Vertical
- Competition From Sic Devices in High-Voltage Power Applications
- Potential Use of GaN in 5g Infrastructure
- Applications in Electric and Hybrid Electric Vehicles
- High Material and Fabrication Costs
- Design Challenges and Complexity
- Analog Devices
- Dialog Semiconductor
- Efficient Power Conversion (EPC)
- GaN Systems
- Integra Technologies.
- Mitsubishi Electric
- Navitas Semiconductor
- Northrop Grumman Corporation
- Sumitomo Electric
- Texas Instruments
- Visic Technologies
For more information about this report visit https://www.researchandmarkets.com/research/4872tq/gan_power_device?w=5
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